HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing
نویسندگان
چکیده
منابع مشابه
Optimization of Direct Tunneling Gate Leakage Current in Ultrathin Gate Oxide FET with High-K Dielectrics
This paper presents the impact of parameter optimization of n-type MOSFET for direct tunneling gate current using ultrathin Si3N4 and HfO2 with EOT (Equivalent Oxide Thickness) of 1.0 nm. This work is compared with TCAD santaurus simulation results to verify that accuracy of the model and excellent reduction in gate leakage with the introduction of the high-k gate dielectrics (HfO2 & Si3N4) in ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2020
ISSN: 2158-3226
DOI: 10.1063/1.5143939